Probing electrostatic potentials in solution with carbon nanotube transistors.

نویسندگان

  • Lisa Larrimore
  • Suddhasattwa Nad
  • Xinjian Zhou
  • Héctor Abruña
  • Paul L McEuen
چکیده

We have used single-walled carbon nanotube transistors to measure changes in the chemical potential of a solution due to redox-active transition-metal complexes. The interaction of the molecules with a gold electrolyte-gate wire changes the electrostatic potential sensed by the nanotube, which in turn shifts the gate-voltage dependence of the nanotube conductance. As predicted by the Nernst equation, this shift depends logarithmically on the ratio of oxidized to reduced molecules.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Identifying the mechanism of biosensing with carbon nanotube transistors.

Carbon nanotube transistors have outstanding potential for electronic detection of biomolecules in solution. The physical mechanism underlying sensing however remains controversial, which hampers full exploitation of these promising nanosensors. Previously suggested mechanisms are electrostatic gating, changes in gate coupling, carrier mobility changes, and Schottky barrier effects. We argue th...

متن کامل

Application of Neural Space Mapping for Modeling Ballistic Carbon Nanotube Transistors

In this paper, using the neural space mapping (NSM) concept, we present a SPICE-compatible modeling technique to modify the conventional MOSFET equations, to be suitable for ballistic carbon nanotube transistors (CNTTs). We used the NSM concept in order to correct conventional MOSFET equations so that they could be used for carbon nanotube transistors. To demonstrate the accuracy of our mod...

متن کامل

Three-dimensional simulation studies on electrostatic predictions for carbon nanotube field effect transistors

Analysis of the electrostatic characteristics and the gate capacitance of typical nanostructured carbon nanotube field effect transistors (CNTFETs) were performed numerically. A previously developed parallelized electrostatic Poisson’s equation solver (PPES) is employed, coupled with a parallel adaptive mesh refinement (PAMR) to improve the numerical accuracy near the region where variation of ...

متن کامل

Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

متن کامل

Ballistic (n,0) Carbon Nanotube Field Effect Transistors' I-V Characteristics: A Comparison of n=3a+1 and n=3a+2

Due to emergence of serious obstacles by scaling of the transistors dimensions, it has been obviously proved that silicon technology should be replaced by a new one having a high ability to overcome the barriers of scaling to nanometer regime. Among various candidates, carbon nanotube (CNT) field effect transistors are introduced as the most promising devices for substituting the silicon-based ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Nano letters

دوره 6 7  شماره 

صفحات  -

تاریخ انتشار 2006